EBIC investigations of thick SOI layers
نویسندگان
چکیده
2014 Thick SOI layers obtained by zone melting with and without seeds, respectively, have been investigated by EBIC with respect to their electrical properties (electrical homogeneity, electrically active defects, minority-carrier diffusion length). A variety of inhomogeneities being partly of complex origin has been observed. Their formation is affected by existence of seeds. Besides usual dark contrasts due to defects acting as recombination site there is evidence that some contrast phenomena are caused by dopant inhomogeneities. Revue Phys. Appl. 23 (1988) 281-288 MARS 1988,
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